Infineon · FETs & Power MOSFETs · MPN IMBG120R017M2HXTMA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 89nC |
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 126pF |
| Current - Continuous Drain(Id) | 107A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 470W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 17.1mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.91nF |
1.2kV 107A 5.1V 470W 17.1mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS