Infineon · FETs & Power MOSFETs · MPN IMBG120R012M2HXTMA1
No reviews yet — be the first to review Infineon IMBG120R012M2HXTMA1.
| Gate Charge(Qg) | 124nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 144A |
| Output Capacitance(Coss) | 176pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 600W |
| RDS(on) | 12.2mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.05nF |
| Type | N-Channel |
1.2kV 144A 600W TO-263-7