Infineon · FETs & Power MOSFETs · MPN IMBF170R650M1XTMA1
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| Gate Charge(Qg) | 8nC |
|---|---|
| Drain to Source Voltage | 1.7kV |
| Output Capacitance(Coss) | 12pF |
| Current - Continuous Drain(Id) | 7.4A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 88W |
| RDS(on) | 650mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 422pF |
| Type | N-Channel |
N-Channel 1.7kV 7.4A 88W Surface Mount TO-263-7-13