Infineon IMBF170R450M1XTMA1

Infineon · FETs & Power MOSFETs · MPN IMBF170R450M1XTMA1

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Specifications

Gate Charge(Qg)11nC
Drain to Source Voltage1.7kV
Current - Continuous Drain(Id)9.8A
Output Capacitance(Coss)16pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.7V
Pd - Power Dissipation107W
RDS(on)450mΩ
Reverse Transfer Capacitance (Crss@Vds)1.7pF
Number1 N-channel
Input Capacitance(Ciss)610pF
TypeN-Channel

Technical details

1.7kV 9.8A 5.7V 107W 450mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS

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