Infineon IMBF170R1K0M1XTMA1

Infineon · FETs & Power MOSFETs · MPN IMBF170R1K0M1XTMA1

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Specifications

Gate Charge(Qg)5nC
Configuration-
Drain to Source Voltage1.7kV
Output Capacitance(Coss)7.2pF
Current - Continuous Drain(Id)5.2A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation68W
RDS(on)809mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)0.7pF
Number1 N-channel
Input Capacitance(Ciss)275pF

Technical details

N-Channel 1.7kV 5.2A 68W Surface Mount TO-263-7-13

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