Infineon IKD03N60RFATMA1

Infineon · Thyristors & Power Discretes · MPN IKD03N60RFATMA1

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Specifications

Td(off)128ns
Pd - Power Dissipation53.6W
Td(on)10ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)6.5A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.3V@0.05mA
Vce Saturation(VCE(sat))2.5V@2.5A,15V
Reverse Recovery Time(trr)31ns
Switching Energy(Eoff)40uJ
Turn-On Energy (Eon)50uJ

Technical details

IGBT FS (Field Stop) 600V 6.5A 53.6W Surface Mount TO-252-3

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