Infineon · FETs & Power MOSFETs · MPN IGT65R140D2ATMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 1.8nC |
| Output Capacitance(Coss) | 22pF |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 47W |
| Technology | E-mode |
| RDS(on) | 140mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.31pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 155pF |
650V 13A 1.2V 47W 140mΩ 1 N-channel N-Channel HSOF-8 Single FETs, MOSFETs RoHS