Infineon · FETs & Power MOSFETs · MPN IGT65R055D2XTMA1
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| Gate Charge(Qg) | 4.7nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 57pF |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 106W |
| Technology | E-mode |
| RDS(on) | 55mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.77pF |
| Number | - |
| Input Capacitance(Ciss) | 340pF |
650V 31A 1.2V 106W 55mΩ PG-HSOF-8 Single FETs, MOSFETs RoHS