Infineon · FETs & Power MOSFETs · MPN IGT65R035D2ATMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 7.7nC |
| Current - Continuous Drain(Id) | 49A |
| Output Capacitance(Coss) | 91pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 167W |
| Technology | E-mode |
| RDS(on) | 35mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF |
| Number | - |
| Input Capacitance(Ciss) | 540pF |
650V 49A 1.2V 167W 35mΩ PG-HSOF-8 Single FETs, MOSFETs RoHS