Infineon · FETs & Power MOSFETs · MPN IGT65R025D2ATMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 11nC |
| Current - Continuous Drain(Id) | 70A |
| Output Capacitance(Coss) | 130pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 236W |
| Technology | E-mode |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| RDS(on) | 25mΩ |
| Number | - |
| Input Capacitance(Ciss) | 780pF |
650V 70A 1.2V 236W 25mΩ N-Channel PG-HSOF-8 Single FETs, MOSFETs RoHS