Infineon · FETs & Power MOSFETs · MPN IGT60R190D1S
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 12.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 55.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 157pF |
600V 12.5A 1.2V 55.5W 1 N-channel HSOF-8-3 Single FETs, MOSFETs RoHS