Infineon · FETs & Power MOSFETs · MPN IGT60R190D1ATMA1
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| Gate Charge(Qg) | 3.2nC |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 28pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 52W |
| Technology | E-mode |
| RDS(on) | 140mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.36pF |
| Number | - |
| Input Capacitance(Ciss) | 157pF |
600V 12A 1.2V 52W 140mΩ HSOF-8 Single FETs, MOSFETs RoHS