Infineon IGT60R070D1

Infineon · FETs & Power MOSFETs · MPN IGT60R070D1

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Specifications

Output Capacitance(Coss)72pF
Pd - Power Dissipation125W
Configuration-
Gate Charge(Qg)5.8nC
Drain to Source Voltage600V
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Reverse Transfer Capacitance (Crss@Vds)0.3pF
RDS(on)55mΩ@26.1mA
Number1 N-channel
Input Capacitance(Ciss)380pF

Technical details

125W 600V 31A 1.2V 55mΩ@26.1mA 1 N-channel N-Channel HSOF-8-3 Single FETs, MOSFETs RoHS

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