Infineon IGOT65R035D2AUMA1

Infineon · FETs & Power MOSFETs · MPN IGOT65R035D2AUMA1

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)7.7nC
Current - Continuous Drain(Id)44A
Output Capacitance(Coss)91pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
TechnologyE-mode
Pd - Power Dissipation134W
Reverse Transfer Capacitance (Crss@Vds)1.3pF
RDS(on)0.035Ω
Number-
Input Capacitance(Ciss)540pF

Technical details

650V 44A 1.2V 134W 0.035Ω DSO-20 Single FETs, MOSFETs RoHS

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