Infineon IGOT60R070D1

Infineon · FETs & Power MOSFETs · MPN IGOT60R070D1

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Specifications

Configuration-
Gate Charge(Qg)5.8nC@400V
Drain to Source Voltage600V
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)70mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)380pF

Technical details

600V 31A 1.2V 125W 70mΩ@10V 1 N-channel DSO-20 Single FETs, MOSFETs RoHS

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