Infineon · FETs & Power MOSFETs · MPN IGOT60R042D1AUMA2
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| Gate Charge(Qg) | 8.8nC |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 19A |
| Output Capacitance(Coss) | 97pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 250W |
| Technology | E-mode |
| RDS(on) | 0.037Ω |
| Reverse Transfer Capacitance (Crss@Vds) | 1.35pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 649pF |
600V 19A 1.2V 250W 0.037Ω 1 N-channel N-Channel HDSOP-16 Single FETs, MOSFETs RoHS