Infineon · FETs & Power MOSFETs · MPN IGLT65R055D2ATMA1
No reviews yet — be the first to review Infineon IGLT65R055D2ATMA1.
| Gate Charge(Qg) | 4.7nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 57pF |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Technology | E-mode |
| Pd - Power Dissipation | 102W |
| RDS(on) | 55mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.77pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 340pF |
650V 31A 1.2V 102W 55mΩ 1 N-channel N-Channel SOP-16 Single FETs, MOSFETs RoHS