Infineon · FETs & Power MOSFETs · MPN IGLR60R190D1XUMA1
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| Gate Charge(Qg) | 3.2nC |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 28pF |
| Current - Continuous Drain(Id) | 12.8A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 55.5W |
| Technology | E-mode |
| RDS(on) | 140mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.36pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 157pF |
600V 12.8A 1.2V 55.5W 140mΩ 1 N-channel N-Channel TSON-8(5x6) Single FETs, MOSFETs RoHS