Infineon · FETs & Power MOSFETs · MPN IGLD65R140D2AUMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 1.8nC |
| Current - Continuous Drain(Id) | 12A |
| Output Capacitance(Coss) | 22pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Technology | E-mode |
| Pd - Power Dissipation | 42W |
| RDS(on) | 140mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.31pF |
| Number | - |
| Input Capacitance(Ciss) | 155pF |
650V 12A 1.2V 42W 140mΩ N-Channel LSON-8 Single FETs, MOSFETs RoHS