Infineon · FETs & Power MOSFETs · MPN IGLD65R110D2AUMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 2.4nC |
| Current - Continuous Drain(Id) | 14A |
| Output Capacitance(Coss) | 29pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 51W |
| Technology | E-mode |
| RDS(on) | 110mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.39pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 170pF |
650V 14A 1.2V 51W 110mΩ 1 N-channel N-Channel SON-8(7x7) Single FETs, MOSFETs RoHS