Infineon · FETs & Power MOSFETs · MPN IGLD65R080D2AUMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 3.3nC |
| Current - Continuous Drain(Id) | 18A |
| Output Capacitance(Coss) | 40pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 68W |
| Technology | E-mode |
| RDS(on) | 80mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.54pF |
| Number | - |
| Input Capacitance(Ciss) | 240pF |
650V 18A 1.2V 68W 80mΩ PG-LSON-8 Single FETs, MOSFETs RoHS