Infineon · FETs & Power MOSFETs · MPN IGLD60R190D1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 3.2nC@400V |
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 157pF |
600V 10A 1.2V 62.5W 1 N-channel LSON-8-1(8x8) Single FETs, MOSFETs RoHS