Infineon · FETs & Power MOSFETs · MPN IGLD60R070D1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 5.8nC@400V |
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 72pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 114W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF |
| RDS(on) | 70mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 380pF |
600V 15A 1.6V 114W 70mΩ 1 N-channel LSON-8-1(8x8) Single FETs, MOSFETs RoHS