Infineon · FETs & Power MOSFETs · MPN IGD70R200D2SAUMA1
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| Gate Charge(Qg) | 1.3nC |
|---|---|
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 7.3A |
| Output Capacitance(Coss) | 15pF |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Technology | E-mode |
| Pd - Power Dissipation | 21W |
| RDS(on) | 200mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.21pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 91pF |
700V 7.3A 1.2V 21W 200mΩ 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS