Infineon IGC037S12S1XTMA1

Infineon · FETs & Power MOSFETs · MPN IGC037S12S1XTMA1

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)10nC
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)71A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation45W
Technology-
Reverse Transfer Capacitance (Crss@Vds)4.9pF
RDS(on)2.7mΩ
Number-
Input Capacitance(Ciss)1000pF

Technical details

120V 71A 2V 45W 2.7mΩ PG-TSON-6 Single FETs, MOSFETs RoHS

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