Infineon · FETs & Power MOSFETs · MPN IGC033S10S1Q
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| Gate Charge(Qg) | 11nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 540pF |
| Current - Continuous Drain(Id) | 76A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 45W |
| Technology | - |
| Reverse Transfer Capacitance (Crss@Vds) | 6.1pF |
| RDS(on) | 2.4mΩ |
| Number | - |
| Input Capacitance(Ciss) | 1200pF |
100V 76A 1.9V 45W 2.4mΩ TSON-6(3x5) Single FETs, MOSFETs RoHS