Infineon · FETs & Power MOSFETs · MPN IGC025S08S1XTMA1
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 12nC |
| Output Capacitance(Coss) | 570pF |
| Current - Continuous Drain(Id) | 86A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 45W |
| Technology | E-mode |
| RDS(on) | 1.8mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | - |
| Input Capacitance(Ciss) | 1250pF |
80V 86A 2V 45W 1.8mΩ N-Channel PG-TSON-6 Single FETs, MOSFETs RoHS