Infineon IGC019S06S1XTMA1

Infineon · FETs & Power MOSFETs · MPN IGC019S06S1XTMA1

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)13nC
Current - Continuous Drain(Id)99A
Output Capacitance(Coss)700pF
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation45W
Technology-
RDS(on)1.3mΩ
Reverse Transfer Capacitance (Crss@Vds)17pF
Number-
Input Capacitance(Ciss)1450pF

Technical details

60V 99A 2V 45W 1.3mΩ PG-TSON-6 Single FETs, MOSFETs RoHS

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