Infineon · FETs & Power MOSFETs · MPN IGC016K10S2
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| Gate Charge(Qg) | 16nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 108A |
| Output Capacitance(Coss) | 800pF |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 45W |
| Technology | - |
| RDS(on) | 1.3mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| Number | - |
| Input Capacitance(Ciss) | 1700pF |
100V 108A 2V 45W 1.3mΩ TSON-6(3x5) Single FETs, MOSFETs RoHS