Infineon · FETs & Power MOSFETs · MPN IGB110S10S1Q
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 3.4nC |
| Current - Continuous Drain(Id) | 23A |
| Output Capacitance(Coss) | 140pF |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 15W |
| Technology | E-mode |
| RDS(on) | 9.4mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| Number | - |
| Input Capacitance(Ciss) | 300pF |
100V 23A 2V 15W 9.4mΩ N-Channel TSON-4(3x4) Single FETs, MOSFETs RoHS