Infineon · FETs & Power MOSFETs · MPN IGB070S10S1XTMA1
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| Gate Charge(Qg) | 6.1nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 38A |
| Output Capacitance(Coss) | 310pF |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 23W |
| Technology | - |
| RDS(on) | 5mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 3.6pF |
| Number | - |
| Input Capacitance(Ciss) | 650pF |
100V 38A 2.1V 23W 5mΩ PG-TSON-4-2 Single FETs, MOSFETs RoHS