Infineon IAUZN10S7L289ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUZN10S7L289ATMA1

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Specifications

Output Capacitance(Coss)180pF
Pd - Power Dissipation45W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)10.9nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)25.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)428pF

Technical details

45W 100V 1.6V 25.8mΩ@10V 1 N-channel N-Channel SON-8 Single FETs, MOSFETs RoHS

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