Infineon IAUZN04S7N013ATMA2

Infineon · FETs & Power MOSFETs · MPN IAUZN04S7N013ATMA2

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Specifications

Output Capacitance(Coss)1.461nF
Pd - Power Dissipation94W
Configuration-
Gate Charge(Qg)37nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.6V
RDS(on)1.13mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-channel
Input Capacitance(Ciss)2.511nF

Technical details

94W 40V 2.6V 1.13mΩ@10V 1 N-channel N-Channel PG-TSDSON-8-39 Single FETs, MOSFETs RoHS

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