Infineon IAUZ40N08S5N100ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUZ40N08S5N100ATMA1

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)24.2nC@10V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.591nF
TypeN-Channel

Technical details

80V 40A 3.8V 68W 10mΩ@10V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS

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