Infineon · FETs & Power MOSFETs · MPN IAUZ30N08S5N186ATMA1
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| Gate Charge(Qg) | 12.1nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 155pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 41W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 18.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 759pF |
80V 30A 3.8V 41W 18.6mΩ@10V 1 N-channel TSDSON-8-32 Single FETs, MOSFETs RoHS