Infineon IAUZ18N10S5L420

Infineon · FETs & Power MOSFETs · MPN IAUZ18N10S5L420

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Specifications

Gate Charge(Qg)8nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)88pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)42mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)470pF
TypeN-Channel

Technical details

N-Channel 100V 18A 30W Surface Mount TSDSON-8FL

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