Infineon · FETs & Power MOSFETs · MPN IAUTN12S5N018TATMA1
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| Drain to Source Voltage | 120V |
|---|---|
| Gate Charge(Qg) | 145nC@10V |
| Current - Continuous Drain(Id) | 309A |
| Output Capacitance(Coss) | 3.08nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 358W |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF |
| RDS(on) | 1.8mΩ@10V |
| Input Capacitance(Ciss) | 10.74nF |
| Type | N-Channel |
120V 309A 3.6V 358W 1.8mΩ@10V N-Channel HDSOP-16-2 Single FETs, MOSFETs RoHS