Infineon · FETs & Power MOSFETs · MPN IAUTN08S5N012LATMA1
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| Current - Continuous Drain(Id) | 410A |
|---|---|
| Pd - Power Dissipation | 375W |
| RDS(on) | 1.15mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Drain to Source Voltage | 80V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 137pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 15.34nF |
| Gate Charge(Qg) | 231nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 2.73nF |
N-Channel 80V 410A 375W HSOF-8