Infineon · FETs & Power MOSFETs · MPN IAUTN06S5N008TATMA1
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 273nC@10V |
| Current - Continuous Drain(Id) | 503A |
| Output Capacitance(Coss) | 4.16nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 358W |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| RDS(on) | 0.79mΩ@10V |
| Input Capacitance(Ciss) | 20.28nF |
| Type | N-Channel |
60V 503A 3V 358W 0.79mΩ@10V N-Channel Single FETs, MOSFETs RoHS