Infineon · FETs & Power MOSFETs · MPN IAUTN06S5N008GATMA1
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 210nC@10V |
| Current - Continuous Drain(Id) | 504A |
| Output Capacitance(Coss) | 3.2nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 358W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 0.62mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15.6nF |
| Type | N-Channel |
60V 504A 2.6V 358W 0.62mΩ@10V 1 N-channel N-Channel PG-HSOG-8-1 Single FETs, MOSFETs RoHS