Infineon · FETs & Power MOSFETs · MPN IAUTN06S5N008ATMA1
No reviews yet — be the first to review Infineon IAUTN06S5N008ATMA1.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 273nC@10V |
| Output Capacitance(Coss) | 4.16nF |
| Current - Continuous Drain(Id) | 510A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 358W |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| RDS(on) | 0.76mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 20.28nF |
| Type | N-Channel |
60V 510A 3V 358W 0.76mΩ@10V 1 N-channel N-Channel PG-HSOF-8-1 Single FETs, MOSFETs RoHS