Infineon IAUT260N10S5N019

Infineon · FETs & Power MOSFETs · MPN IAUT260N10S5N019

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Specifications

Gate Charge(Qg)166nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.9nF
Current - Continuous Drain(Id)260A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)92pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.83nF
TypeN-Channel

Technical details

N-Channel 100V 260A 300W HSOF-8

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