Infineon · FETs & Power MOSFETs · MPN IAUT150N10S5N035
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| Gate Charge(Qg) | 87nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 166W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.014nF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.11nF |
100V 150A 2.2V 166W 3.5mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS