Infineon IAUS300N08S5N011ATMA1

Infineon · FETs & Power MOSFETs · MPN IAUS300N08S5N011ATMA1

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Specifications

Gate Charge(Qg)231nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)2.6nF
Current - Continuous Drain(Id)300A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)1.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)16.25nF
TypeN-Channel

Technical details

80V 300A 3.8V 375W 1.1mΩ@10V 1 N-channel N-Channel HSOG-8 Single FETs, MOSFETs RoHS

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