Infineon IAUS300N04S4N007

Infineon · FETs & Power MOSFETs · MPN IAUS300N04S4N007

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Specifications

Configuration-
Gate Charge(Qg)342nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)300A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)368pF
RDS(on)0.74mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)27.356nF

Technical details

40V 300A 3V 375W 0.74mΩ@10V 1 N-channel HSOG-8-1 Single FETs, MOSFETs RoHS

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