Infineon · FETs & Power MOSFETs · MPN IAUS200N08S5N023
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.67nF |
80V 200A 3V 200W 2.3mΩ@10V 1 N-channel HSOG-8 Single FETs, MOSFETs RoHS