Infineon · FETs & Power MOSFETs · MPN IAUMN08S5N013GAUMA1
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 138nC@10V |
| Current - Continuous Drain(Id) | 350A |
| Output Capacitance(Coss) | 1.657nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 307W |
| RDS(on) | 1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 84pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.612nF |
| Type | N-Channel |
80V 350A 3V 307W 1mΩ@10V 1 N-channel N-Channel PG-HSOG-4-1 Single FETs, MOSFETs RoHS