Infineon · FETs & Power MOSFETs · MPN IAUCN10S7L180ATMA1
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| Output Capacitance(Coss) | 272pF |
|---|---|
| Pd - Power Dissipation | 58W |
| Configuration | - |
| Gate Charge(Qg) | 11nC |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| RDS(on) | 16.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 668pF |
58W 100V 1.6V 16.1mΩ@10V 1 N-channel N-Channel PG-TDSON-8 Single FETs, MOSFETs RoHS