Infineon · FETs & Power MOSFETs · MPN IAUCN08S7N024TATMA1
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| Output Capacitance(Coss) | 1.514nF |
|---|---|
| Pd - Power Dissipation | 157W |
| Configuration | - |
| Gate Charge(Qg) | 54nC |
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF |
| RDS(on) | 2.25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.73nF |
157W 80V 2.8V 2.25mΩ@10V 1 N-channel N-Channel LHDSO-10 Single FETs, MOSFETs RoHS