Infineon · FETs & Power MOSFETs · MPN IAUCN08S7N019ATMA1
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| Gate Charge(Qg) | 81.9nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 2.283nF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.2V |
| Pd - Power Dissipation | 169W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.63nF |
| Type | N-Channel |
N-Channel 80V 200A 169W Surface Mount TDSON-8